ROHM launches TSC3PAK SiC MOSFET package

Rohm has developed and launched the TSC3PAK package for Silicon carbide MOSFETs, which features a top-side heat dissipation structure. This innovation allows for automated mounting while maintaining heat dissipation performance comparable to conventional through-hole packages. The new package is designed to enhance efficiency and reliability in power conversion circuits for Electric vehicle applications, such as onboard chargers and electric compressors, as well as industrial equipment like PV inverters and server power supplies. The TSC3PAK incorporates Rohm's 4th Generation Silicon carbide MOSFETs, offering low ON resistance and high-speed switching characteristics, which significantly reduce switching losses and improve overall application efficiency. Mass production of the TSC3PAK began in June 2026. The product also features a proprietary groove structure to ensure a class-leading creepage distance, supporting safe insulation design in high-voltage applications.