Toshiba Launches TPM1R408RH MOSFET
Analysis based on 7 articles · First reported Jun 30, 2026 · Last updated Jun 30, 2026
The launch of TPM1R408RH by Toshiba Electronic Devices & Storage Corporation is expected to positively impact the semiconductor market by providing a more efficient solution for power supplies in Artificial intelligence data centers and communications base stations. This could lead to increased demand for Toshiba's products and potentially influence competitors to develop similar advanced power MOSFETs.
Toshiba Electronic Devices & Storage Corporation has launched TPM1R408RH, an 80V N-channel power MOSFET, utilizing its latest-generation U-MOS11-H process. This new product is designed for switched-mode power supplies in industrial equipment, specifically targeting Artificial intelligence data centers and communications base stations. TPM1R408RH offers significantly lower drain-source On-resistance and improved trade-off between on-resistance and total gate charge compared to its predecessor, TPM1R908QM, leading to reduced power loss and enhanced EMI suppression. The adoption of the SOP Advance(E) package further contributes to higher output and more compact power supply designs. This development aims to address the increasing power demands in data centers due to Artificial intelligence processing and the need for higher efficiency in communications infrastructure.
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