Samsung and Longsys unveil AI memory at FMS 2026

At the Future of Memory and Storage (FMS) 2026 conference in Santa Clara, California, held August 4-6, 2026, Samsung Electronics introduced its next-generation AI memory technology, the V10 Bonding V-NAND (BV-NAND) prototype, featuring over 400 layers and a new wafer-bonding architecture that increases storage density by about 58% over its previous V9 NAND. Samsung also showcased concept models of zHBM and zNAND-O architectures, which stack memory vertically to improve bandwidth and energy efficiency. Meanwhile, Lexar presented its 'Edge AI Storage Fusion' showcase, highlighting integrated solutions for AI Agent Hosts, AI PCs, and AI Mobile devices. Lexar partnered with AMD to integrate AIDIMM high-bandwidth memory, iSA intelligent storage agent, and AISSD, demonstrating a system running large language models with reduced memory usage. Lexar also unveiled its 5nm SPU-powered PCIe Gen5 SSD and HLCache UFS technology, which improves DRAM efficiency in mobile devices. These announcements underscore the industry's focus on meeting surging AI-driven demand for high-capacity, power-efficient memory and storage solutions.