Para Light Launches ThermaFlat SiC MOSFETs
Analysis based on 7 articles · First reported Aug 05, 2026 · Last updated Aug 05, 2026
The launch of ThermaFlat SiC MOSFETs could strengthen Para Light's position in the growing power semiconductor market, potentially increasing its competitiveness against established players. The technology's efficiency and thermal stability benefits may drive adoption in electrification and AI infrastructure, positively impacting the broader semiconductor and power electronics sectors.
On August 5, 2026, Para Light Electronics announced the official launch of its ThermaFlat SiC MOSFET family, comprising the ThermaFlat I and ThermaFlat II series. The new devices are powered by Para Light's Ultra-Low RDS(on) Drift Technology, which limits on-resistance drift to approximately 8% across a wide temperature range from -25°C to +125°C, compared to conventional SiC MOSFETs. This breakthrough aims to improve thermal stability, reduce conduction losses, and enhance reliability in high-power applications such as AI data centers, EV charging stations, energy storage systems, and photovoltaic inverters. The portfolio includes 650 V and 1200 V options in industry-standard packages, with the ThermaFlat II series featuring a high gate threshold voltage for improved noise immunity. Para Light leverages its integrated manufacturing and global supply chain across Taiwan, China, the United States, India, and Myanmar to support the rollout.
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