Power Integrations Unveils 2200V GaN Technology

Power Integrations, Inc. announced that its PowiGaN gallium-nitride (GaN) technology is now rated at up to 2200 V, a level far exceeding all other commercially available GaN technologies. This breakthrough enables higher power density and efficiency for high-voltage applications such as AI data centers, electric vehicles, renewable energy, and HVDC infrastructure. The company positions this as an industry-first, extending GaN into voltage ranges traditionally served by silicon carbide (SiC). CEO Jennifer Lloyd highlighted applications in next-generation AI data centers with 1500 V distribution architectures and future EV systems operating at 48V. Analyst Roy Dagher of Yole Développement noted that the 2200 V rating gives margin for single-stage topologies and future-proofs emerging designs, and projected the power GaN device market to reach $3.5 billion by 2031.